feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3JM low power, strobe use non-insulated type, glass passivation type CR3JM application automatic strobe flasher ] 1. refer to sections 1, 2 on strobe flasher application. parameter average on-state current repetitive peak on-state current ] 1 peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight symbol i t (av) i trm p gm p g (av) v fgm v rgm i fgm t j t stg conditions commercial frequency, sine half wave, 180 conduction, t a =37 c c m =1800 m f with discharge current typical value unit a a w w v v a c c g ratings 0.8 240 3.0 0.3 6 6 1 C40 ~ +125 C40 ~ +125 2.0 ?i t (av) ........................................................................ 0.8a ?v drm ....................................................................... 400v ?i gt ..........................................................................50ma symbol v rrm v rsm v drm v dsm parameter repetitive peak reverse voltage non-repetitive peak reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage voltage class unit v v v v 8 400 480 400 480 maximum ratings type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * * measurement point of case temperature outline drawing dimensions in mm to-220 24 1 3 1
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4 cathode anode gate anode
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3JM low power, strobe use non-insulated type, glass passivation type symbol i rrm i drm v tm v gt v gd i gt c c test conditions t j =25 c, v rrm applied t j =25 c, v drm applied t c =25 c, i tm =3a, instantaneous value t j =25 c, v d =6v, r l =6 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =6 w c m =1800 m f, v cm =350v, i tm =240a, l=50 m h, v gk =C6v, t a =25 c unit ma ma v v v ma m f typ. parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current commutating capacitor ] 2 min. 0.1 max. 0.1 0.1 1.8 2.0 50 2.8 limits electrical characteristics ] 2. refer to sections 3 on strobe flasher application. 10 02 8 46 9 17 35 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 25? 10 ? 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? v fgm = 6v v gt = 2.0v i gt = 50ma (t j = 25?) p gm = 3w v gd = 0.1v i fgm = 1a p g(av) = 0.3w maximum on-state characteristics on-state current (a) on-state voltage (v) gate characteristics gate voltage (v) gate current (ma) performance curves
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3JM low power, strobe use non-insulated type, glass passivation type 5.0 3.5 1.5 1.0 0.5 4.0 4.5 3.0 2.0 2.5 300 100 140 260 180 220 0 v cm = 350v c m = 1000? l = 50? t a = 25? see fig.1 3000 1000 2500 2000 1500 500 300 100 140 260 180 220 c c =1.5? c c =2.0? c c =2.5? c c =3.0? c c =3.5 f v cm = 350v t a = 25? l = 50? see fig.1 c c =4.0? 180 150 110 100 90 160 170 140 120 130 100 0 20 80 40 60 90 10 70 30 50 80 v cm = 350v i tm = 240a c m = 1800? l = 50? typical example 10 2 23 10 0 5710 1 23 5710 2 23 5710 3 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 i g tw t 0 typical example 10 1 10 3 7 5 3 2 20 100 1020304050607080 10 2 7 5 3 2 4 4 typical example 1.0 0.7 0.3 0.2 0.1 0.8 0.9 0.6 0.4 0.5 0 80 ?0 0 305070 60 ?0 10 20 40 typical example gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) gate trigger current vs. junction temperature junction temperature (?) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) commutating characteristics main capacitor (?) peak on-state current (a) commutating capacitor vs. peak on-state current commutating capacitor (?) peak on-state current (a) commutating capacitor vs. case temperature case temperature (?) 100 (%) commutating capacitor ( tc = t? ) commutating capacitor ( tc = 25? ) 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 c c 22 w 10k w 1k w l v cm c m 10 w 0.1 m + - 15k w 0.1 m i t t.u.t a * 3 ] 3 the circuit between a-b is a substitute for xenon flash tube. b mitsubishi semiconductor high-speed switching thyristor ? CR3JM low power, strobe use non-insulated type, glass passivation type strobe flasher application be sure to remember the following points when designing series type automatic strobe flashers using the CR3JM or cr3amz. 1. rated repetitive peak on-state current i trm the figure shows a turn-off characteristic test circuit. when a repetitive discharge current passes to the thyristor (tut) through the load from the charged main capacitor (c m ), the limiting value for the on-state peak current the thyristor can withstand is the rated repetitive peak on-state current. to ensure the current fed into the thyristor will not exceed this rated value, it is essential to select the appropriate main capaci- tor charging voltage v cm , the load (xenon lamp) resistance and the anode reactor l described below. 2. main capacitor c m in addition to its effect on the peak on-state current value, the capacitance of the main capacitor is an important factor deter- mining the temperature rise of the thyristor junction. when the capacitance of the main capacitor becomes large, the dis- charge-time constant becomes great also, the temperature rise at the thyristor junction will be very serious and the commutating capability of the thyristor will decrease. when the device is turned off, damage may also be caused by the reverse voltage applied to the thyristor resulting in thermal run away. 3. commutating capacitor c c the capacitance values of the commutating capacitor (c c ) re- quired for turning the thyristor off can be obtained from the fol- lowing equation since the electric charge stored in this capacitor and the electric charge released during commutation are the same. cc 3 i t t q v cc i 2 t 2v cc (Cdi t /dt) c ++ d c c ( m f) where i t : on-state current (a) immediately before turning off t q : pulse turn-off time of the thyristor ( m s) v cc : c c charging voltage (v) (Cdi t /dt) c : rate of on-state current drop during commutation (a/ m s) d c c : loss component due to the impedance of the commutat- ing circuit. in real conditions, however, the turn-off time will vary consider- ably depending on the temperature of the junction, and the gate reverse bias conditions during turn-off. it is necessary, therefore, to check the actual c c value and to adapt the settings (circuit conditions). the commutating characteristics graph shown in the figure re- lates to general circuit conditions. 4. anode reactor l when the thyristor is turned on, the anode reactor l is used to control the rise of the discharge current from the main capacitor and the commutating circuit current in the commutating mode, respectively. the anode reactor l is suitable for use within the range of 20~100 m h (air core). with this anode reactor inserted, the voltage during commuta- tion may rise and the thyristor may lead to withstand voltage de- terioration so that it is necessary to connect the 1~3a class rec- tifier diode in anti-parallel for protection, i.e., in the opposite di- rection to the flow of the discharge current. fig 1. test circuit for commutating capacitor
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